| Ident. | Authors (with country if any) | Title |
|---|
| 000668 |
| Formation specifity of InAs/GaAs submonolayer superlattice |
| 000945 |
| Reversibility of the island shape, volume and density in Stranski-Krastanow growth |
| 000962 |
| Optical phenomena connected with intraband carrier transitions in quantum dots and quantum wells |
| 000964 |
| Optical and structural properties of self-organized InGaAsN/GaAs nanostructures |
| 000969 |
| Near- and mid-infrared spectroscopy of InGaAs/GaAs quantum dot structures |
| 000983 |
| Incorporation of InAs nanostructures in a silicon matrix : growth, structure and optical properties |
| 000987 |
| Impact of carrier lateral transport and surface recombination on the PL efficiency of mesas with self-organized quantum dots |
| 000996 |
| Entropy-driven effects in self-organized formation of quantum dots |
| 000A18 |
| 1.3 μm InAs/GaAs quantum dot lasers and VCSELs grown by molecular beam epitaxy |
| 000A21 |
| Tuning quantum dot properties by activated phase separation of an InGa(Al)As alloy grown on InAs stressors |
| 000A82 |
| Structure and optical properties of Si/InAs/Si layers grown by molecular beam epitaxy on Si substrate |
| 000A84 |
| Stacked InAs/InGaAs Quantum Dot Heterostructures for Optical Sources Emitting in the 1.3 μm Wavelength Range |
| 000A90 |
| Long-Wavelength Emission in InGaAsN/GaAs Heterostructures with Quantum Wells |
| 000B05 |
| Hole and electron emission from InAs quantum dots |
| 000B12 |
| Mechanisms of InGaAlAs Solid Solution Decomposition Stimulated by InAs Quantum Dots |
| 000C12 |
| 0.94 μm diode lasers based on Stranski-Krastanow and sub-monolayer quantum dots |
| 000C34 |
| Optical and structural properties of InAs quantum dots in a GaAs matrix for a spectral range up to 1.7 μm |
| 000C45 |
| Long-wavelength lasing from multiply stacked InAs/InGaAs quantum dots on GaAs substrates |
| 000C56 |
| Heteroepitaxial growth of InAs on Si: a new type of quantum dot |
| 000C65 |
| Long-wavelength emission in structures with quantum dots formed in the stimulated decomposition of a solid solution at strained islands |
| 000C66 |
| Lasing at a wavelength close to 1.3 μm in InAs quantum-dot structures |
| 000C92 |
| InAs/InGaAs quantum dot structures on GaAs substrates emitting at 1.3 μm |
| 000C97 |
| InGaAs/GaAs structures with quantum dots in vertical optical cavities for wavelengths near 1.3 μm |
| 000D09 |
| Exciton waveguide and lasing in structures with superfine GaAs quantum wells and InAs submonolayer inclusions in an AlGaAs host |
| 000D34 |
| Intrinsic optical confinement and lasing in InAs-AlGaAs submonolayer superlattices |
| 000D80 |
| Lasing in structures with InAs quantum dots in an (Al, Ga)As matrix grown by submonolayer deposition : Special issue papers on quantum dots |
| 000E18 |
| 1.75 μm emission from self-organized InAs quantum dots on GaAs |
| 000F07 |
| Formation of InAs quantum dots in a GaAs matrix during growth on misoriented substrates |
| 000F30 |
| Optical studies of modulation doped InAs/GaAs quantum dots |
| 000F31 |
| Optical properties of InAlAs quantum dots in an AlGaAs matrix |
| 000F37 |
| Lateral association of vertically-coupled quantum dots |
| 000F50 |
| Formation of InSb quantum dots in a GaSb matrix |
| 000F51 |
| Formation of InSb quantum dots in a GaSb matrix using molecular-beam epitaxy |
| 000F52 |
| Formation of InAs quantum dots on a silicon (100) surface |
| 001034 |
| Properties of strained (In, Ga, Al)As lasers with laterally modulated active region |
| 001061 |
| Photoluminescence of InSb quantum dots in GaAs and GaSb matrices |
| 001116 |
| Growth and characterization of coherent quantum dots grown by single- and multi-cycle metal-organic chemical vapour deposition |
| 001146 |
| Photoluminescence of arrays of vertically coupled, stressed InAs quantum dots in a GaAs (100) matrix |
